In Situ Thin-Film Stress, Strain and Wafer Curvature
The thin-film stress and strain that occur in real-time during growth impact the thin-film performance and reliability. k-Space offers four tools to measure thin-film stress and strain all based on the kSA MOS optically based technology. The kSA MOS is used for real-time measurement in situ during processes such as MBE, sputtering, PLD, E-beam evaporation, and thermal processing. For MOCVD, the kSA ICE provides real-time in situ modular system. The kSA MOS UltraScan and kSA MOS ThermalScan are ex situ used on wafers, mirrors, glass, and more for measurement of curvature, stress, tilt, and bow height.
kSA MOS
In Situ tool for real-time measurement of film stress, film strain, and wafer curvature induced by thin films or thermal processes on a substrate/wafer.
kSA ICE
MOS Module: In situ modular tool for measuring real-time film stress, film strain and wafer curvature induced by thin films or thermal processes on a substrate/wafer, ideal for MOCVD reactors with high speed or low speed rotation and limited optical access.
Ex-Situ Thin-film Stress, Strain, Wafer Curvature, Bow, and Tilt
kSA MOS UltraScan/ ThermalScan
Ex situ tool with full 2D wafer mapping, for measuring film stress, film strain, and wafer curvature, bow, and tilt induced by thin films or thermal processes on a substrate/wafer.
