Real-time absolute temperature measurement of standard semiconductor substrates like GaAs, InP, and Si, as well as wide bandgap substrates transparent in the IR (including GaN, SiC, ZnO, AlN, Ga2O3 and SrTiO3). Go where pyrometers can’t!
The kSA BandiT is a non-contact, non-invasive, real-time, absolute wafer and thin-film temperature monitoring tool used during thin-film deposition and thermal processing. Using the temperature-dependent optical absorption edge inherent in semiconductor materials, kSA BandiT provides semiconductor temperature monitoring in ranges that pyrometers cannot measure: substrates transparent in the infrared (including GaN, SiC, ZnO, AlN, Ga2O3 and SrTiO3), as well as low temperature monitoring, e.g. low temperature GaAs, InP, and Si deposition. This includes room temperature wafer measurements. Furthermore, kSA BandiT is immune to changing viewport transmission, stray light, and signal contribution from substrate or source heaters, all sources of measurement error for pyrometers.
Combined with its patented blackbody emission monitor, kSA BandiT has the ability to monitor the full range of temperatures for most substrate materials, including low band-gap substrates and metal films. Finally, because kSA BandiT uses a solid-state spectrometer, real-time film thickness and surface roughness can also be measured.
For more information see the BandiT Product Specification Sheet →
For more information see the UV BandiT Product Specification Sheet →
For the latest BandiT calibration files see our Support Page →
Click to Enlarge
Band Edge Temperature/Thermometry (BET)
The most common application of the kSA BandiT tool is for direct substrate temperature measurement. By measuring the position of the substrate absorption edge, the absolute temperature of the wafer can be determined. This absorption edge, which is directly proportional to the band gap of the material, is temperature dependent. It is this temperature dependence that we rely on to determine the wafer temperature. A solid-state spectrometer is used to acquire either diffusely reflected, or transmitted light from the wafer. This spectra is then analyzed in real-time by the kSA BandiT software, fitting to the absorption edge, and determining the absolute wafer temperature from the position of the absorption edge.
Click to Enlarge
Blackbody Temperature Measurement
In addition to kSA’s patented band edge temperature measurement, BandiT offers a complimentary measurement technique, blackbody temperature measurement. This approach, also patented by k-Space, fits the radiation emitted from the wafer to Planck’s equation. In this approach, the emissivity of the wafer can be changing, without affecting the temperature measurement. This is because it is the functional shape of the blackbody spectra, not its amplitude, that dictates the temperature of the emitting material. This is unlike pyrometry, which relies solely on the absolute signal level in a given (small) wavelength range. The kSA BandiT blackbody temperature measurement is typically used when the band edge of the material cannot be measured. This occurs typically when looking at a non-semiconductor substrate, a heavily doped substrate, or a very narrow band gap substrate (e.g. Ge or InAs). The blackbody temperature measurement technique typically has a lower limit in temperature of ~ 250 °C, due to limited emitted radiation at low temperatures.
Film Thickness and Roughness Measurement
Because a solid-state spectrometer is used with the kSA BandiT system, the full diffuse spectra is obtained. This spectra contains a wealth of information in addition to the material absorption edge. By analyzing the below gap interference fringes, the total film thickness can be very accurately determined. By analyzing the above gap scatter signal, changes in roughness can be easily monitored. Combined with real-time temperature measurement, kSA BandiT offers a very powerful in situ monitoring tool for your thin-film deposition and processing needs.
Click to Enlarge
Multiwafer and Full Platen Scan Capability
kSA BandiT can be configured to synchronize to substrate rotation. For production applications, or where multiwafer platens are used, the kSA BandiT MW (MultiWafer) system allows you to monitor the temperature of all wafers on the platen. Markers can be placed where you are interested in temperature measurement, for example at wafer centers and edges.
Click to Enlarge
If you desire full platen maps of temperature, the kSA BandiT Platen Scan option allows you to control the position of the BandiT detector head, yielding wafer temperature maps of the entire platen. A computer-controlled motor on the kSA BandiT head steps to every desired radius position on the platen, and data is taken synchronously during rotation at every radial position. Detailed temperature maps and template analysis statistics then allow you to adjust heater zone tuning ratios, determine hot or cold spots in the platen pockets, etc.
Temperature Capabilities
kSA BandiT can measure substrate temperatures from > 1000C all the way down to ~ -250C. The graph at right shows the temperature vs band gap dependence (as determined using kSA BandiT) for a variety of semiconductor materials. Note that the slope of this dependence gets steeper as you go from small to wide bandgap materials. Note that GaAs and InP band gap dependence has been taken all the way down to cryogenic temperatures.
What You Get With a kSA BandiT System
Click to Enlarge
The kSA BandiT system comes in several different flavors, depending on what type of growth or materials processing chamber you have. Our most common kSA BandiT configuration includes a light source optics, a detector optics head, and a 19” rack mount electronics controller. In many cases, e.g. high temperature MBE growth, the substrate heater can be used as the light source, and a light source optics head is not needed. In most MOCVD applications, the viewport to sample distance is relatively short and the optical access is limited. As such our optics heads for most MOCVD reactors are small, and integrate a light source and detector into a single head.
Whatever your chamber configuration, we’re confident we can supply a kSA BandiT system for your in situ metrology needs. We look forward to hearing from you about your thin-film and wafer temperature measurement needs!
References
View All ReferencesGrowth of PbTe Nanowires by Molecular Beam Epitaxy
Sander G. Schellingerhout, Eline J. de Jong, Maksim Gomanko, Xin Guan, Yifan Jiang, Max S.M. Hoskam,
Sebastian Koelling, Oussama Moutanabbir, Marcel A. Verheijen, Sergey M. Frolov, Erik P.A.M. Bakkers
Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System
Brelon J. May, Jae Jin Kim, Patrick Walker, William E. McMahon, Helio R. Moutinho, Aaron J. Ptak, David L. Young
Molecular Beam Epitaxy of GaAs Templates On Water Soluble NaCl Thin Films
Brelon J. May, Jae Jin Kim, Patrick Walker, Helio R. Moutinho, William E. McMahon, Aaron J. Ptak, David L.Young
AlInAsSb Avalanche Photodiodes on InP Substrates
Kodati, S. H.; Lee, S.; Guo, B.; Jones, A. H.; Schwartz, M.; Winslow, M.; Pfiester, N. A.; Grein, C. H.; Ronningen, T. J.; Campbell, J. C.; Krishna, S.
The Microstructural and Stress Evolution in Sputter Deposited Ni Thin Films
Thomas Koenig, Zhaoxia Rao, Eric Chason, Garritt J. Tucker, Gregory B. Thompson
Large Tunable Bandgaps in the InAs/AlAs Strain-compensated Short-period Superlattices Grown by Molecular Beam Epitaxy
Jinshan Yao, Rui Pan, Wenyang Wang, Chen Li, Baile Chen, Hong Lu, and Yan-Feng Chen
GaAs Substrate Recycling Using in-situ Deposited NaCl Layers via Molecular Beam Epitaxy
B. J. May, J. J. Kim, A. J. Ptak and D. L. Young
Epitaxial III-V-Bismide Materials for Space Power Generation
Margaret A. Stevens
Band Edge Thermometry for the MBE Growth of (Hg,Cd)Te-Based Materials
R. Schlereth, J. Hajer, L. Fürst, S. Schreyeck, H. Buhmann, L.W. Molenkamp
Room-Temperature Photoluminescence and Electroluminescence of 1.3-μm-Range BGaInAs Quantum Wells on GaAs Substrates
R. H. El-Jaroudi, K. M. McNicholas, A. F. Briggs, S. D. Sifferman, L. Nordin, and S. R. Bank
Electrical and Optical Characterisation of Low Temperature Grown InGaAs for Photodiode Applications
Leh Woon Lim, Pallavi Patil, Igor P Marko, Edmund Clarke, Stephen J Sweeney, Jo Shien Ng, John P R David, and Chee Hing Tan
Polarization Dependent Photoluminescence and Optical Anisotropy in CuPtB-Ordered Dilute GaAs1-XBix Alloys
Tadas Paulauskas, Bronislovas Čechavičius, Vytautas Karpus, Lukas Jočionis, Saulius Tumėnas, Jan Devenson, Vaidas Pačebutas, Sandra Stanionytė, Viktorija Strazdienė, Andrejus Geižutis, Mária Čaplovičová, Viliam Vretenár, Michael Walls, and Arūnas Krotkus
Characterization of Tellurium and Silicon as n-type dopants for GaAsBi
Margaret A. Stevens, Samuel Lenney, John McElearney, Kevin A. Grossklaus, and Thomas E. Vandervelde
Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
Tadas Paulauskas, Vaidas Pačebutas, Renata Butkutė, Bronislovas Čechavičius, Arnas Naujokaitis, Mindaugas Kamarauskas, Martynas Skapas, Jan Devenson, Mária Čaplovičová, Viliam Vretenár, Xiaoyan Li, Mathieu Kociak, and Arūnas Krotkus
Growth-Induced Temperature Changes During Transition Metal Nitride Epitaxy on Transparent SiC Substrates
Douglas Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey, Eric N. Jin, and David J. Meyer
Mid-Infrared Electroluminescence From Type-II In(Ga)Sb Quantum Dots
Andrew F. Briggs, Leland J. Nordin, Aaron J. Muhowski, Priyanka Petluru, David Silva, Daniel Wasserman, and Seth R. Bank
MBE Growth and Characterization of Strained HgTe (111) Films on CdTe/GaAs
Jian Zhang, Shengxi Zhang, Xiaofang Qiu, Yan Wu, Qiang Sun, Jin Zou, Tianxin Li, Pingping Chen
Strain Stabilization of Far From Equilibrium GaAsBi Films
Margaret A. Stevens, Kevin A. Grossklaus, Thomas E. Vandervelde
Separate Control of Number Density and Size of ErAs Nanoparticles by a Modified Diffusion Length Process Using Two Flux Conditions During Molecular Beam Epitaxy
Yuanchang Zhang, Kurt G. Eyink, Madelyn Hill, Brittany Urwin, Krishnamurthy Mahalingam
Links Between Bismuth Incorporation and Surface Reconstruction During GaAsBi Growth Probed by In Situ Measurements
Cornille, A. Arnoult, Q. Gravelier, and C. Fontaine
Superconducting Proximity Effect in InAsSb Surface Quantum Wells With In Situ Al Contact
William Mayer, William F. Schiela, Joseph Yuan, Mehdi Hatefipour, Wendy L. Sarney, Stefan P. Svensson, Asher C. Le, Tiago Campos, Kaushini S. Wickramasinghe, Matthieu C. Dartiailh, IgorZuticc, and Javad Shabani
In Situ Band-Edge Monitoring of Cd1−yZnyTe Substrates for Molecular Beam Epitaxy of HgCdTe
Jacobs, R.N., Pinkie, B., Arias, J. et al.
Spin Generation in Completely MBE Grown Co2FeSi/MgO/GaAs Lateral Spin Valves
Georg Hoffmann, Jens Herfort, Manfred Ramsteiner
Molecular Beam Epitaxy Growth of InAs/AlSb Superlattices on GaAs Substrates
D. Benyahia, Ł. Kubiszyn, K .Michalczewski, A. Kębłowski, K. Grodecki, P. Martyniuk
Microstructural Evolution of High Quality AlN Grown by PAMBE Under Different Growth Conditions
Neha Aggarwal, Shibinv Krishna, Shubhendra Kumar Jain, Monu Mishra, K.K. Maury, Sandeep Singh, Mandeep Kaur, Govind Gupta
Unusual Step Meandering Due to Ehrlich-Schwobel Barrier in GaN Epitaxy on the N-polar Surface
Henryk Turski, Filip Krzyżewski, AnnaFeduniewicz-Żmuda, Pawel Wolny, Marcin Siekacz, Grzegorz Muziol, Caroline Cheze, Krzesimir Nowakowski-Szukudlarek, Huili Grace Xing, Debdeep Jena, Magdalena Zaluska-Kotur, Czeslaw Skierbiszewski
Impact on Photon-Assisted Charge Carrier Transport by Engineering Electrodes of GaN Based UV Photodetectors
Neha Aggarwal, Shibin Krishna, Shubhendra Kumar Jain, Arzoo Arora, Lalit Goswami, Alka Sharma, Sudhir Husale, Abhiram Gundimeda, Govind Gupta
Epitaxial Growth of Co2FeSi/MgO/GaAs (001) Heterostructures Using Molecular Beam Epitaxy
G. Hoffmann, B. Jenichen, J. Herfort
Influence of Temperature and Al/N Ratio on Structural, Chemical & Electronic Properties of Epitaxial AlN Films Grown Via PAMBE
Shubhendra Kumar Jain, Monu Mishra, Neha Aggarwal, Shibin Krishna, Bhasker Gahtori, Akhilesh Pandey, Govind Gupta
Single-Photon Detectors Integrated in Quantum Photonic Circuits
Digeronimo, G.E.
Terahertz Excitation Spectra of GaAsBi Alloys
V Pačebutas, S Stanionytė, A Arlauskas, R Norkus, R Butkutė, A Geižutis, B Čechavičius and A Krotkus
Kinetically Controlled Dewetting of Thin GaAs Cap From an ErAs/GaAs Nanoparticle Composite Layer
Yuanchang Zhang, Kurt G. Eyink, Brittany Urwin, Krishnamurthy Mahalingam, Madelyn R. Hill, and Larry Grazulis
Influence of Solute Partitioning on the Microstructure and Growth Stresses in Nanocrystalline Fe(Cr) Thin Films
Xuyang Zhou, Gregory B.Thompson
Chapter 30 – Mass Production of Optoelectronic Devices
Roland Jäger
Effects of In Situ UV Irradiation on the Uniformity and Optical Properties of GaAsBi Epi-Layers Grown by MBE
Daniel A. Beaton, M. Steger, T. Christian, A. Mascarenhas
Ultra-Short Period Ga-free Superlattice Growth on GaSb
W. L. Sarney, S. P. Svensson, M. K. Yakes, Y. Xu, D. Donetsky, and G. Belenky
Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials
A. K. Rockwell, M. Ren, M. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank
Revealing the Hidden Heavy Fermi Liquid in CaRuO3
Yang Liu, Hari P. Nair, Jacob P. Ruf, Darrell G. Schlom, and Kyle M. Shen
Growth Rate Independence of Mg Doping in GaN Grown by Plasma-Assisted MBE
Henryk Turski, Grzegorz Muzioł, Marcin Siekacz, Pawel Wolny, Krzesimir Szkudlarek, Anna Feduniewicz-Żmuda, Krzysztof Dybko, Czeslaw Skierbiszewski
Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor
Seung Jun Lee, Younjin Jang, Han Joon Kim, Eun Suk Hwang, Seok Min Jeon, Jun Shik Kim, Taehwan Moon, Kyung-Tae Jang, Young-Chang Joo, Deok-Yong Cho, and Cheol Seong Hwang
Phase and Microstructures in Sputter Deposited Nanocrystalline Fe-Cr Thin Films
Xuyang Zhou , Gregory B. Thompson
Crystallographically Aligned 1.508 eV Nitrogen Pairs in Ultra-Dilute GaAs:N
Brian Fluegel et al
Vapor-Defect-Solid Growth Mechanism for NanoNets Utilizing Natural Defect Networks in Polycrystals
Zumin Wang, Eric J.Mittemeijer
Luminescent N-polar (In, Ga) N/GaN Quantum Wells Achieved by Plasma-Assisted Molecular Beam Epitaxy at Temperatures Exceeding 700° C
C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski, and O. Brandt
Influence of Temperature and Al/N Ratio on Structural, Chemical & Electronic Properties of Epitaxial AlN Films Grown Via PAMBE
Shubhendra Kumar Jain, Monu Mishra, Neha Aggarwal, Shibin Krishna, Bhasker Gahtori, Akhilesh Pandey, Govind Gupta
Self-Assembled Stoichiometric Barium Titanate Thin Films Grown by Molecular Beam Epitaxy
T. Al.Morgan, M.Zamani-Alavijeh, S.Erickson, G.Story, W.Schroeder, A.Kuchuk, M.Benamar, G.J.Salamo
High-Performance SWIR/MWIR and MWIR/MWIR Bispectral MCT Detectors by AIM
Heinrich Figgemeier, Christopher Ames, Johannes Beetz, Rainer Breiter, Detlef Eich, et al.
Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
Benyahia, Ł. Kubiszyn, K. Michalczewski, J. Boguski, A. Kębłowski, P. Martyniuk, J. Piotrowski and A. Rogalski
Self-Assembled Barium Titanate Nanoscale Films by Molecular Beam Epitaxy
Timothy Allen Morgan
Interfacial Misfit Array Technique for GaSb Growth on GaAs
(001) Substrate by Molecular Beam Epitaxy
D. Benyahia, Ł. Kubiszyn, K. Michalczewski, A. Keblowski, P. Martyniuk, J. Piotrowski, and A. Rogalski
A Highly Responsive Self-Driven UV Photodetector Using GaN Nanoflowers
N. Aggarwal, S. Krishna, A. Sharma, L. Goswami, D. Kumar, S. Husale, G. Gupta
Tailoring the Optical Properties of InAs/GaAs Quantum Dots by Means of GaAsSb, InGaAs and InGaAsSb Strain Reducing Layers
A.Salhi, S.Alshaibani, B.Ilahi, M.Alhamdan, A.Alyamani, H.Albrithen, M.El-Desouki
Electron-Beam Deposition of Superconducting Molybdenum Thin Films for the Development of Mo/Au TES X-ray Microcalorimeter
Fred Michael Finkbeiner, Joseph S. Adams, Simon R. Bandler, Gabriele L. Betancourt-Martinez, Ari David Brown, Meng-Ping Chang, James A. Chervenak, Meng P. Chiao, Aaron M. Datesman et al.
Carrier Dynamics in GaAsBi Quantum Wells
S. Azaizia, A. Balocchi, D. Lagarde, A. Arnoult, X. Marie, C. Fontaine, H. Carrère
ErAsSb Nanoparticle Growth on GaAs Surface by Molecular Beam Epitaxy
Yuanchang Zhang, Kurt G. Eyink, Joseph Peoples, Krishnamurthy Mahalingam, Madelyn Hill, Larry Grazulis
The MBE Growth and Optimization of High Performace Terahertz Frequency Quantum Cascade Lasers
L. H. Li, J. X. Zhu, L. Chen, A. G. Davies, and E. H. Linfield
MCT by MBE on GaAs at AIM: State of the Art and Roadmap
H. Figgemeier, J. Wenisch, D. Eich, S. Hanna, W. Schirmacher, H. Lutz, T. Schallenberg, R. Breiter
Growth and Characterization of Epitaxial Al Layers on GaAs and Si Substrates for Superconducting CPW Resonators in Scalable Quantum Computing Systems
Julie Tournet, University of Waterloo
Evaluation of HgCdTe on GaAs Grown by Molecular Beam Epitaxy for High-Operating-Temperature Infrared Detector Applications
J. Wenisch, W. Schirmacher, R. Wollrab, D. Eich, S. Hanna, R. Breiter, H. Lutz, and H. Figgemeier
Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan, Chen Li, Yusuke Hirono, Xian Hu, Yanfei Zhao, Joon
Sue Lee, Jian Wang, Zhiming M. Wang, Shuiqing Yu, Michael E. Hawkridge, Mourad Benamara, and Gregory J. Salamo
Reduction of Process Variation Through Automated Substrate Temperature Uniformity Mapping in Multi-Wafer MBE Systems
Thomas J. Rogers, Likang Li, Robert Yanka, Chris Santana, Jason R. Williams, Charles A. Taylor II, Darryl Barlett
Adsorption-Controlled Molecular-Beam Epitaxial Growth of BiFeO3
J.F. Ihlefeld, A. Kumar, V. Gopalan, D.G. Schlom, Y.B. Chen, X.Q. Pan, T. Heeg, J. Schubert, X. Ke, P. Schiffer, J. Orenstein, L.W. Martin, Y.H. Chu, and R. Rames
Substrate Temperature Measurement Using a Commercial Band-Edge Detection System
I. Farrer, J.J. Harris, R. Thomson, D. Barlett, C.A. Taylor II, and D.A. Ritchie
Growth Related Interference Effects in Band Edge Thermometry of Semiconductors.
R. N. Sacks, D. Barlett, C. A. Taylor II, and J. Williams
In Situ Temperature Control of MBE Growth Using Band-Edge Thermometry.
Shane Johnson, Chau-Hong Kuo, Martin Boonzaayer, Wolfgang Braun, Ulrich Koelle, Yong-Hang Zhang, and John Roth
Precision of Noninvasive Temperature Measurement by Diffuse Reflectance Spectroscopy.
T.P. Pearsall, Stevan R. Saban, James Booth, Barrett T. Beard Jr., and S.R. Johnson
Diffuse optical reflectivity measurements on GaAs during MBE processing.
C. Lavoie, S.R. Johnson, J.A. Mackenzie, T. Tiedje, and T. van Buuren.
